Description The IRF540N (TO-220-3) MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in wide variety of applications. Features: Drain to source voltage Vds is 100V Gate to source voltage is ±20V On Resistance Rds(on) of 44mohm at Vgs of 10V Power dissipation Pd of 130W at 25°C Continuous drain current Id of 33A at Vgs 10V and 25°C Operating junction temperature range from -55°C to 175°C Applications: Power Management, Industrial, Portable Devices, Consumer Electronics. Share this post: on Twitter on Facebook on LinkedIn Related
